Halbleiter-Kolloquium in Kooperation mit dem Cluster Leistungselektronik

Die Teilnahme ist kostenfrei und offen für alle Interessierten. Eine Voranmeldung ist nicht erforderlich.

Beginn: 17:15 Uhr
 

Am MS-TEAMS Meeting teilnehmen

Rechtliche Hinweise
 

• Wide Band Gap Power at Silicon costs – the European YESvGaN Project
  Elke Meissner, Fraunhofer IISB, Erlangen

Vertical GaN based electronic devices are raising more and more interest, but the related technology is still in infant state compared to the more established HEMT technology. This talk will briefly summarize the difficulties and point out the challenges associated with vertical GaN devices from a materials point of view. The YESvGaN project aims to establish a new class of vertical GaN power transistors which shall combine the performance benefits of vertical Wide Band Gap (WBG) transistors with the cost advantages of established silicon technology.
 

• Modelling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices
  Sondre Michler, Siltronic AG, Burghausen

Vertical membrane power devices based on GaN-on-Si(111) are capable of achieving higher breakdown voltage and current density than their lateral counterpart. However, since several micrometers GaN epilayers are required and there is a large thermal and lattice mismatch with the substrate, wafer curvature becomes critical. To gain better control over the wafer curvature, a model is proposed that attempts to relate epitaxy to the resulting curvature during the growth of GaN on large Si substrates.

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